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,Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based o
【作 者】
:
【机 构】
:
Institute of Opto-electronic Materials and Technology,South China Normal University,Guangzhou 510631
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2010年4期
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