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在分析标准的CMOS带隙基准原理的基础上,设计了高精度、高电源抑制比的CMOS带隙基准电压发生器。其特点是采用内部电压减小电源噪声的影响;通过两个串联的二极管提高,减小运放失调的影响。该电路基于CSMC0.35um DPTM工艺,使用Spectre仿真该电路得到结果为,常温下输出电压为1.23V,在-20℃～80℃温度范围内温漂为10PPM/℃,在4V到7V范围内电源抑制比为0.01V/V,达到了设计的预期目标。
Based on the analysis of the standard CMOS bandgap reference principle, a CMOS bandgap reference voltage generator with high accuracy and high power supply rejection ratio is designed. It is characterized by the use of internal voltage to reduce the impact of power supply noise; raised by two diodes in series, reducing the impact of operational amplifier imbalance. Based on CSMC0.35um DPTM process, this circuit was simulated with Specter. The result is that the output voltage is 1.23V at room temperature, the temperature drift is 10PPM / ℃ in the temperature range of -20 ℃ ~ 80 ℃, the power in the range of 4V ~ 7V Suppression ratio of 0.01V / V, to achieve the desired design goals.