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硅衬底片背部的机械加工损伤除在外延及其后的热处理过程中会向晶片完整区域传播引起位错的增殖,产生一种二次缺陷外,还会对晶片完整区域产生一附加的应力,有人称其为“宏观内应力”。例如:抛光后的晶片,一旦从抛光托上取下来后,仔细观察就会发现它具有不同程度的弯曲现象。我们用X-射线衍射法测量表明。其内部晶格面确实是弯曲的。说明晶片内确实受到一种应力的作用。这种应力的产生,是由于晶片背部存在的损伤层造成的,目前对于加工损伤层的结构较可靠的认识如图1所示:其中无定形层完全失去了原来的晶体结构。镶嵌层是方位,粒度不同的微粒层,越向下微粒方位分布越接近,粒度越大,裂缝层具有微细角度的裂缝,可见裂缝层以上的损伤层体积
Machining damage on the backside of the silicon substrate sheet, in addition to propagating dislocations to the complete area of the wafer during epitaxy and subsequent heat treatment, produces a secondary defect that creates an additional stress on the complete area of the wafer, Some people call it “macro-internal stress.” For example: polished wafer, once removed from the polishing care, careful observation will find it with different degrees of bending phenomenon. We measured by X-ray diffraction. Its internal lattice is indeed curved. This shows that the chip is indeed subjected to a stress effect. This stress is caused by the damage layer existing on the back of the wafer. A more reliable understanding of the structure of the damaged layer is as shown in FIG. 1, in which the amorphous layer completely loses the original crystal structure. Inlaid layer is azimuth, particle size of different particle layers, the more down the particle orientation distribution closer, the greater the particle size, the fracture layer with a slight angle of the cracks, visible fracture layer volume above the damage layer