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This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
This paper presents a new method based on spatial controlling in quantum well intermixing in InP / InGaAsP structures using ICP technology. The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios .With an optimal condition including ICP -RIE etching depth, SiO 2 deposition, and RTA process, five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample. The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi -bandgap structures.