High-performance Ge n~+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained Ni Ge electroded Ge n+/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm~2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. High-performance Ge n ~ + / p junctions were fabricated at a low formation temperature from 325 ° C to 400 ° C with a metal (nickel) -induced dopant activation technique. The obtained Ni Ge electroded Ge n + / p junction has a rectification ratio of 5.6 × 10 -4 and a forward current of 387 A / cm ~ 2 at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.