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为了研究有机薄膜电致发光器件发光区暗斑的形成,制备了Al/8-羟基喹啉铝/铟锡氧化物/玻璃衬底结构的发光器件,观察了器件失效前后的表面形貌,并对器件进行了微区Auger能谱分析.结果表明,铟锡氧化物电极表面In向有机层内的扩散是产生微区高电场、从而形成发光区暗斑的一个不可忽视的重要因素.
In order to study the formation of dark spots in the light-emitting area of organic thin-film electroluminescent devices, a light-emitting device with Al / 8-hydroxyquinoline aluminum / indium tin oxide / glass substrate structure was prepared and the surface morphology before and after device failure was observed. Micro-Auger spectroscopy analysis of the device shows that the diffusion of In into the organic layer on the surface of the indium tin oxide electrode is an important factor that can not be neglected to produce the dark spot in the light-emitting area.