半导体的基本反射率及其与能带结构之间的关系已作了研究,其基本结果已为某些资料所使用,具体地说用在某些半导体材料的非晶形、单晶和多晶结构的特性研究。在这些研究中,碲镉汞混合化合物薄膜特别重要,原因是可以用于霍尔效应器件 The fundamental reflectivity of semiconductors and their relationship to the band structure have been studied and the basic results have been used for some of the data, specifically for the amorphous, single crystal and polycrystalline structures of certain semiconductor materials Characteristics of the study. In these studies, HgCdTe thin film hybrid compounds are particularly important because they can be used in Hall-effect devices