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简述快速恢复功率二极管的几个重要电参数及其工作原理,根据长期制造二极管的实验经验和实验数据分析,掺Au工艺对快速恢复功率二极管反向恢复时间trr和外延二极管正向压降VF以及反向电流IR的影响。实验采用掺Au扩散温度在900℃以上,观察随着扩Au温度升高trr变小、而IR和VF随之增大,通过实验着重讨论了这三个电参数的相互制约关系。同时指出,选择Si片时,衬底电阻率范围不易过宽,避免由于衬底电阻率Rs差值较大对Si片与Si片之间的电参数工艺控制指数的影响。
According to the experimental experience and experimental data analysis of long-term manufacturing diodes, the Au doping process on the fast recovery power diode reverse recovery time trr and epitaxial diode forward voltage drop VF And the impact of reverse current IR. The experimental results show that the diffusion temperature of Au doped with Au is above 900 ℃. As the temperature of Au expands, trr becomes smaller and the IR and VF increase. The relationship between these three electrical parameters is discussed emphatically. At the same time, it is pointed out that when the Si wafer is selected, the range of the substrate resistivity is not too wide, and the influence of the process control index of the electrical parameter between the Si wafer and the Si wafer due to the large difference of the substrate resistivity Rs is avoided.