论文部分内容阅读
G·C·Jain等曾对高温扩散到太阳能等级的多晶硅和单晶硅中的硼作过剖面分析:用阳极氧化对硅层逐次减薄,每次减薄后,用四探针法测剩余硅层的薄层电阻,通过对薄层电阻与剩余硅层厚度(距表面深度)关系的测定,求得硼的剖面分布曲线。我们建立了与此相类似的,更为简单易行的剖面分析方法,用化学腐蚀代替阳极氧化,依据实验数据作图,求出杂质分布剖面,并对CVD法制备的多晶硅膜作了硼杂质的剖面分析。此方法虽不如用具有电子枪剥离装置的俄歇(Auger)电子能谱仪作剖面分析快,但操作及设备简单,可代替俄歇能谱作杂质剖面分析。
G · J · Jain et al. Had a cross-section analysis of the high temperature diffusion of polycrystalline silicon and single-crystal silicon in the solar grade: the anodic oxidation of the silicon layer after the thinning, each thinning, the four probe method to measure the remaining The sheet resistance of the silicon layer is obtained by measuring the relationship between the sheet resistance and the thickness of the remaining silicon layer (the depth from the surface). We have established a similar, simpler and easier method of profile analysis, using chemical etching instead of anodization, plotting data based on experimental data to find out the profile of the impurity distribution, and CVD methods for polycrystalline silicon films made of boron impurities Profile Analysis. Although this method is not as good as profiling an Auger electron spectrometer with an electron gun stripping device, it is simple to operate and equipment and can be used as an alternative to Auger spectroscopy for impurity profile analysis.