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采用GaAs p-i-n二极管单片集成工艺技术研制出C波段限幅开关集成芯片,该芯片集成了微波限幅器和单刀单掷(SPST)开关功能,尺寸仅为2.5 mm×1.0 mm。采用偏置相关S参数测试法建立可定标的p-i-n二极管器件模型,精准的器件模型保证集成芯片一次流片成功。实测结果显示,该芯片在5～6 GHz频率范围内插入损耗小于1 dB,隔离度大于50 dB,电压驻波比小于1.5∶1,开关速度小于25 ns,可承受10 W以上的连续波功率。该集成芯片在T/R组件接收通道可替代两只单一功能芯片,有较好的应用前景。
A C-band limit switch IC is developed using a GaAs p-i-n diode monolithic integrated process technology that integrates a microwave limiter and single-pole single-throw (SPST) switching functionality with a footprint of only 2.5 mm × 1.0 mm. The bias-related S-parameter test method is used to establish a scalable p-i-n diode device model. The accurate device model ensures the success of the first chip of the integrated chip. The measured results show that the chip has less than 1 dB insertion loss, more than 50 dB isolation, less than 1.5: 1 VSWR and less than 25 ns switching speed in the frequency range of 5 ~ 6 GHz. It can withstand continuous power of more than 10 W . The integrated chip can be used as a substitute for two single function chips in the T / R module receiving channel and has a good application prospect.