【摘 要】
：
The effect of doping additional Bi on the magnetoresistance (MR) of La2/3Ca1/3BxMn1-x O3 was investigated. It is found that traditional colossal magnetoresistan
【机 构】
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Department of Physics,Wuhan University,Key Laboratory of Acoustic and Photonic Materials and Devices
【出 处】
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Journal of Wuhan University of Technology(Materials Science
论文部分内容阅读
The effect of doping additional Bi on the magnetoresistance (MR) of La2/3Ca1/3BxMn1-x O3 was investigated. It is found that traditional colossal magnetoresistance (CMR) peak can only be observed in the x<0.05 samples and the peak value decreases with the increase of x, but the x≥0.05 samples show a magnetoresistance plateau above 200 K because of the presence of additional (La,Ca,Bi)-O layers. Moreover, this MR plateau is enhanced for the segregation of the La, Ca, and Bi elements.
The effect of doping additional Bi on the magnetoresistance (MR) of La2 / 3Ca1 / 3BxMn1-x O3 was investigated. The is found that the traditional colossal magnetoresistance (CMR) peak can only be observed in the x with the increase of x, but the x ≥ 0.05 samples show a magnetoresistance plateau above 200 K because of the presence of additional (La, Ca, Bi) -O layers. Moreover, this MR plateau is enhanced for the segregation of the La, Ca, and Bi elements.
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