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本文介绍一种采用载流子总量方法分析SOIMOSFET器件特性及热载流子效应的数值模型。使用专用模拟程序LADES7联解器件内部二维泊松方程、电子和空穴的连续性方程。LADES7可用于设计和预测不同工艺条件、几何结构对器件性能的影响。该模型直接将端点电流、端点电压与内部载流子的输运过程联系在一起，可准确地模拟SOIMOSFET器件的特性并给出清晰的内部物理图象。本文给出了LADES7软件模拟的部分结果，并着重讨论了热载流子效应产生的栅电流。
This paper presents a numerical approach to analyze SOIMOSFET device characteristics and hot carrier effects using a total carrier approach. Using a dedicated simulation program, LADES7, the two-dimensional Poisson’s equation, continuity equation of electrons and holes inside the device are solved. LADES7 can be used to design and predict the impact of different process conditions and geometries on device performance. The model directly relates the endpoint current and endpoint voltage to the transport of internal carriers, accurately characterizing the SOIMOSFET device and giving a clear internal physical picture. This paper presents some of the LADES7 software simulations and highlights the gate current generated by hot-carrier effects.