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简要介绍了用核反应~16О(d,P_1)~17О分析硅表面氧含量的方法。鉴别了集成电路制备工艺中对硅表面氧化层的清洗效果,给出了对硅表面自然氧化过程的观察结果。
A brief introduction of the method of analyzing the oxygen content on the surface of silicon by the nuclear reaction ~ 16 O (d, P 1) ~ 17 O The cleaning effect on the oxide layer on the surface of the silicon in the integrated circuit manufacturing process was identified, and the observation of the natural oxidation process on the silicon surface was given.