论文部分内容阅读
使用射频磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,在Si(100)衬底上,分别沉积不同厚度的Ca膜。随后,800℃真空退火45分钟、1小时和1.5小时。半导体钙硅化物,即立方相的Ca2Si膜和简单正交相的Ca2Si膜首次、单独、直接生长在Si(100)衬底上。实验结果指明在多相共生的Ca-Si化合物中,Ca膜的沉积厚度、因溅射而生长的Ca-Si化合物的生长厚度决定了某一个单相的钙硅化物独立的生长。另外,退火温度为800℃时,有利于单相钙硅化物的独立生长。并且,退火时间也是关键因素。
Different thickness of Ca films were deposited on Si (100) substrates by RF magnetron sputtering system at constant sputtering power, Ar gas pressure and Ar gas flow rate, respectively. Subsequently, vacuum annealing was performed at 800 ° C for 45 minutes, 1 hour and 1.5 hours. For the first time, semiconducting calcium silicides, cubic Ca2Si films and simple orthorhombic Ca2Si films, were grown directly on Si (100) substrates. The experimental results indicate that the thickness of the Ca film deposited in the multi-phase intergalactic Ca-Si compound and the growth thickness of the Ca-Si compound grown by sputtering determine the independent growth of a single-phase calcium silicide. In addition, the annealing temperature is 800 ℃, is conducive to the independent growth of single-phase calcium silicide. And, annealing time is also a key factor.