一 引言 近年来,在ZnSe:Mn肖特基发光二极管的研究方面取得了较大的进展。所采用的ZnSe晶体一般均为用不同方法制得的ZnSe单晶,或者用升华法制得的ZnSe多晶。目前二极管的亮度与效率等虽然达到了较高的水平,但还未完全达到实用阶段。其主要原因之一,是在单晶生长工艺方面,由于生长周期长,不易控制,成本比较高,因而还不能适应 I. INTRODUCTION In recent years, great progress has been made in the research of ZnSe: Mn Schottky light-emitting diodes. The ZnSe crystals used are generally ZnSe single crystals made by different methods, or ZnSe polycrystals prepared by the sublimation method. Although the current brightness and efficiency of diodes reached a high level, but not yet fully reached the practical stage. One of the main reasons is the single crystal growth process, due to the long growth cycle, not easy to control, the cost is relatively high, and therefore can not adapt