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通过化学气相沉积(CVD)工艺在SiO_2/Si衬底生长出MoS_2材料,对材料进行喇曼光谱表征,验证了单层MoS_2的存在;基于CVD生长的单层MoS_2完成了晶圆级背栅场效应晶体管(FET)光电探测器的工艺研发;对MoS_2 FET器件进行了电学特性表征,开关比可达到105数量级,场效应迁移率约为1 cm2·V-1·s-1,栅极漏电流为10-10 A数量级;对MoS2FET器件的光电特性进行了表征,该光电探测器具有普通光电导探测器的基本光电特性,其光电流随光照强度的增强以及源漏电压的增加而增加,同时由于栅极的调制提高了光电探测器的灵活性。通过控制栅极电压能够控制MoS2FET光电探测器的暗电流大小,实现对探测器η参数的有效调制。最后通过器件能带图对MoS_2 FET光电探测器的光电特性进行了阐释,为其走向实际应用奠定了理论基础。
The MoS_2 material was grown on the SiO 2 / Si substrate by chemical vapor deposition (CVD) process, and the material was characterized by Raman spectroscopy to verify the existence of single layer MoS_2. The single layer MoS_2 grown by CVD completed the wafer-level back gate field (FET) photodetector. The MoS_2 FET devices were characterized by their electrical characteristics. The switching ratio was up to 105 orders of magnitude and the field-effect mobility was about 1 cm2 · V-1 · s-1. The gate leakage current Is 10-10 A order of magnitude. The photoelectric properties of MoS2FET devices are characterized. The photodetector possesses the basic photoelectric properties of the photoconductive detector. The photocurrent increases with the increase of light intensity and the increase of the source-drain voltage. Meanwhile, Modulation of the gate improves the photodetector flexibility. By controlling the gate voltage, the dark current of the MoS2FET photodetector can be controlled so as to effectively modulate the detector η parameter. At last, the photoelectric characteristics of the MoS_2 FET photodetector are explained by the band diagram of the device, which lays a theoretical foundation for its practical application.