从实验上研究了版图尺寸对Si/SiGe HBT高频噪声特性的影响。结果表明,在现有工艺条件下,减少外基区电阻(即减少发射极与基区间距),对降低高频噪声很显著。增加基极条数、增加条长也可减少基极电阻,降低高频噪声。发射极条宽从2μm减少为1μm,对噪声的改善很有限。对1μm或2μm条宽,40μm条长的5个基极条或9个基极条的SiGe HBT,在片测试表明,频率从0.4 GHz增加到1.2 GHz,噪声系数在2.5~4.6 dB之间变化。 The effect of layout size on the high frequency noise characteristics of Si / SiGe HBT has been studied experimentally. The results show that under the existing process conditions, reducing the resistance of the outer base (ie, reducing the spacing between emitter and base) is significant for reducing high frequency noise. Increase the number of base, increase the length of the base can also reduce the resistance, reduce high-frequency noise. The emitter width is reduced from 2μm to 1μm, and the noise improvement is limited. For SiGe HBTs with 1μm or 2μm stripe widths and 40μm stripe lengths of 5 base stripes or 9 stripe stripes, the on-chip measurements show that the frequency increases from 0.4 GHz to 1.2 GHz and the noise figure varies from 2.5 to 4.6 dB .