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采用溶胶-凝胶法合成了钒酸铟,颗粒直径在100～200nm范围内。XRD研究表明钒酸铟的晶体结构属正交晶系C mcm空间对称群。紫外-可见吸收光谱研究表明,这种介观粒子钒酸铟的吸收光谱发生了蓝移,其能隙为2.17eV,而相应体相态钒酸铟的能隙为2.00eV。扩散反射光谱研究表明,钒酸铟是一种间接光电子跃迁材料。光电化学研究表明,钒酸铟是一种N-型半导体,其导带电位相对于标准氢电位为-0.11V,价带电位为2.06V。
Indium vanadate was synthesized by sol - gel method with particle diameter in the range of 100 ~ 200 nm. XRD studies show that the crystal structure of indium vanadate is an orthorhombic C mcm space symmetry group. UV-Vis absorption spectra showed that the absorption spectrum of the mesophase particle indium vanadate was blue-shifted with a bandgap of 2.17 eV, whereas the energy gap of the corresponding bulk phase indium vanadate was 2.00 eV. Diffuse reflectance spectroscopy studies show that indium vanadate is an indirect photoelectron transition material. Photoelectrochemical studies show that indium vanadate is an N-type semiconductor with a conduction band potential of -0.11 V vs. the standard hydrogen potential and a valence band potential of 2.06V.