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以单轴应力作用下超晶格量子阱应变能带理论为基础,采用电子反射与干涉方法,研究了单轴应力对超晶格能带的影响,推导了单轴应力与超晶格导带子能级的定量关系。以GaAs-AlGaAs-GaAs为例,具体计算了导带中子能级对应力的依赖关系,进而给出了单轴应力对n型AlGaAs-GaAs量子阱红外探测器(QWIP)吸收波长的影响。计算结果表明,随着单轴压应力的增大,量子阱红外探测器的吸收波长表现出较明显的变化。当单轴压力增大到1.3GPa,量子阱红外探测器的吸收峰值移动了将近1.1μm,并且基本与应力呈线性关系。量子阱红外探测器吸收波长连续可调范围5.57～4.46μm。
Based on the theory of strain energy banding of superlattice quantum wells under uniaxial stress, the influence of uniaxial stress on the superlattice energy band was studied by using the method of electron reflection and interference. The uniaxial stress and superlattice conduction band The quantitative relationship between energy levels. Taking GaAs-AlGaAs-GaAs as an example, the dependence of the conduction band neutron energy level on the stress was calculated. Then the effect of uniaxial stress on the absorption wavelength of n-type AlGaAs-GaAs quantum well infrared detector (QWIP) was given. The calculated results show that with the uniaxial compressive stress increasing, the absorption wavelength of quantum well infrared detector shows obvious changes. When the uniaxial pressure was increased to 1.3 GPa, the absorption peak of the quantum well infrared detector moved nearly 1.1 μm, and its linear relationship with the stress was basically. Quantum well infrared detector continuously adjustable absorption wavelength range of 5.57 ~ 4.46μm.