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用大束流密度的钇金属离子注入硅 ,能够直接合成性能良好的薄层硅化物。随束流密度的增加 ,硅化钇生长 ,薄层硅化物的方块电阻Rs 明显下降 ,当束流密度为 0 .5A/m2 时 ,Rs达到最小值 54Ω/□ ,说明连续的硅化物已经形成。X衍射分析表明 ,注入层中形成了二种硅化钇YSi和YSi2 。透射电子显微镜观察表明 ,当束流密度为 0 .5A/m2 时 ,连续硅化钇薄层已经形成 ,硅化钇薄层厚度为 80nm ,但是在硅化钇层下有高密度损伤层 ,增大束流密度注入 ,连续硅化钇薄层起皱 ,说明为改善硅化钇层质量 ,不能依靠加大束流密度 ,而必须要退火。经过10 50℃退火 6 0s后 ,Rs 下降至 14Ω/□ ,电阻率可小到 0 .56 μΩ·cm ,说明硅化钇薄层质量得到了进一步的改善。
Injecting silicon with a large beam density of yttrium metal ions enables the direct synthesis of a thin layer of silicide with good properties. With the increase of the beam current density, the growth of yttrium silicide and the sheet resistance Rs of the thin layer silicide decrease obviously. When the beam density is 0.5 A / m2, the minimum value of Rs reaches 54Ω / □, indicating that the continuous silicide has been formed. X-ray diffraction analysis showed that two kinds of yttrium silicide YSi and YSi2 were formed in the implanted layer. Transmission electron microscopy shows that when the beam current density is 0.5 A / m2, a continuous thin layer of yttrium silicide has been formed, and the thickness of the yttrium silicide layer is 80 nm. However, there is a high density damage layer under the yttrium silicide layer to increase the beam current density Injection, continuous yttrium silicide thin wrinkling, indicating that to improve the yttrium silicide layer quality, can not rely on increased beam density, and must be annealed. After annealing at 1050 ℃ for 60 seconds, the Rs decreased to 14Ω / □, and the resistivity can be as small as 0.56 μΩ · cm, which shows that the quality of the yttrium silicide thin film is further improved.