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利用准分子激光干涉结晶法使a Si∶H/a SiNx∶H多层膜中的超薄a Si∶H层定域晶化 ,成功地制备出三维有序分布的nc Si阵列。原子力显微镜 (AFM )、微区拉曼 (micro Raman)光谱及剖面透射电子显微镜 (X TEM)的分析结果揭示在晶化薄膜中已形成平均尺寸约为 3 6nm ,横向周期 2 μm ,纵向周期与a Si∶H/a SiNx∶H多层膜周期 (14nm)相等的nc Si阵列。
An ultra-thin a Si: H layer in a Si: H / a SiNx:H multilayer was crystallized by localized laser irradiation using an excimer laser interference crystal method to successfully prepare a three-dimensionally ordered nc Si array. The results of atomic force microscopy (AFM), micro Raman spectroscopy and cross-sectional transmission electron microscopy (TEM) revealed that the average size of crystallized film was about 36 nm, the transverse period was 2 μm, the longitudinal period and a Si: H / a SiNx: H multilayer nc Si array with equal period (14 nm).