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据《Compound Semiconductor》2007年第11/12期报道,英国贸易与工业部(DTI)对LED器件节能的潜力发生兴趣,已投资两个基于新芯片结构的项目。300万欧元(约596万美元)的项目旨在通过开发基于大面积硅衬底的GaNLED,削减固态照明的成本;另一个120万欧元的项目,将开发光子晶体GaNLED
According to Compound Semiconductor’s 11/12/2007 report, the Department of Trade and Industry (DTI) is interested in the potential of energy-saving LED devices and has invested in two new chip-based projects. The € 3 million (approximately $ 5.96 million) project aims to cut the cost of solid-state lighting by developing GaN LEDs based on large-area silicon substrates; another € 1.2 million project will develop photonic crystal GaN LEDs