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反应溅射是制造化合物薄膜最通用的一种技术,至关重要的是靶由金属模式过渡到氧化物模式的临界条件。我们研究了Al-O2反应溅射过程中,总气体流量与溅射功率对临界靶过渡模式的影响。发现在临界条件下,溅射出的Al原子数(N Al)与供给的O原子数(N o)之比几乎是常数,N Al/N o接近于Al2O3的理想化学配比(2:3)。因而可认为,导入的氧几乎完全被Al原子结合,靶仍处于临界条件以下,仍为金属模式。提高供给的O原子量至超过Al2O3的理想化学配比,则输入的氧量超过反应结合效应的氧量,等离子体中氧的浓度突然提高,靶的模式由金属模式变为氧化物模式。
Reactive sputtering is one of the most common techniques used to make compound thin films. Critically, critical conditions for the target to transition from a metal mode to an oxide mode are crucial. We investigated the effect of total gas flux and sputtering power on the critical target transition mode during Al-O2 reactive sputtering. It is found that the ratio of the number of Al atoms (N Al) sputtered and the number of O atoms supplied (N0) is nearly constant under critical conditions and the N Al / N o is close to the ideal stoichiometry (2: 3) . Therefore, it is considered that the introduced oxygen is almost completely bound by the Al atom, and the target is still below the critical condition and remains in the metal mode. Increasing the supply of O atoms beyond the ideal stoichiometry of Al 2 O 3, the amount of oxygen input exceeds the amount of oxygen in the reaction-binding effect and the concentration of oxygen in the plasma suddenly increases and the target mode changes from a metal mode to an oxide mode.