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可通过对氮化硅层掺杂来改变俘获电荷的缺陷种类和数量的方法,改善SONOS非挥发性存储器件的保持性能.建立无定形氮化硅和氧、硫、磷、氟或氯掺杂氮化硅中缺陷的簇模型;根据第一性原理的密度泛函理论(DFT),对缺陷的簇模型结构优化并计算能量,得到缺陷俘获电荷过程的能量变化.发现缺陷俘获电子的能力比俘获空穴的能力好,电子释放过程应对温度敏感,而空穴释放过程主要由隧穿机理控制.预测与氧氮化硅一样,硫或磷掺杂氮化硅代替氮化硅作为SONOS器件的电荷储存层,可改善器件的保持性能.
The retention of SONOS nonvolatile memory devices can be improved by changing the type and amount of defects that trap charge by doping the silicon nitride layer.An amorphous silicon nitride and oxygen, sulfur, phosphorus, fluorine or chlorine doping Silicon nitride defects in the cluster model; according to the first-principles density functional theory (DFT), the cluster model of the defect optimization and calculation of energy, the process of defect capture charge energy change found defective capture electron ratio The ability to trap holes is good, and the electron release process should be temperature-sensitive, while the hole-release process is dominated by the tunneling mechanism.As predicted by silicon oxynitride, silicon or phosphorous-doped silicon nitride replaces silicon nitride as the SONOS device Charge storage layer, can improve the retention performance of the device.