近年来,有一些工作研究用椭偏光法测定离子注入硅.这些都是在单一波长下进行测量的.但是,离子注入损伤只在样品表面一薄层内,即使均匀光吸收介质层(相当于高注入剂量情况),也有折射率n、消光系数k和层厚d待求.莫党等近来发展了一种测定离子注入硅的椭偏光谱法,测定各波长的椭偏参数,然后用分区法对均匀吸收介质层模型进行计算,不必用剖层法配合,可求出d和光学常数的色散关系.在此基础上,本工 In recent years, some studies have investigated ion-implanted silicon by ellipsometry, all of which are performed at a single wavelength. However, ion implantation damage is only within a thin layer on the surface of the sample, even with a uniform layer of light-absorbing medium High injection dose), but also the refractive index n, extinction coefficient k and thickness d to be found.MOOCO recently developed a method for ion implantation of silicon by ellipsometry, measuring the ellipsometric parameters of each wavelength, and then use the partition Method for uniform absorption of the medium layer model is calculated, do not have to use the stratum method, can be obtained d and the optical dispersion of the relationship between the constants on the basis of this