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本文从工业生产角度对GaAlAs单异质结红光二极管的芯片制作技术作了细致研究.设计出能同时生长多枚外延片的新结构生长舟,选择了合适的管芯参数与生长条件,制定出稳定重复的工艺流程.用本项技术制出的单异质结管芯,发光波长为660nm,平均亮度达到4.5mcd/20mA,最高亮度达6.2mcd.
In this paper, the fabrication technology of GaAlAs single heterojunction red diode chips is studied in detail from the point of view of industrial production.The new structure growth boat capable of simultaneously growing multiple epitaxial wafers is designed, and the suitable die parameters and growth conditions are selected A stable and repeatable process.The single heterojunction dice produced by this technique have an emission wavelength of 660 nm and an average brightness of 4.5 mcd / 20 mA with a maximum brightness of 6.2 mcd.