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用等离子体基脉冲偏压技术制备了ＤＬＣ（ 类金刚石碳） 膜，ＤＬＣ 膜硬度值达３０ＧＰａ， 电阻值达１００ＭΩ以上．降低脉冲负偏压峰值及适量引入氢气可促进ＳＰ３ 结构的形成，但氢气量超过一定阈值后ＳＰ２ 束片尺寸细化，ＳＰ２ 键含量有增加的趋势．在ＧＣｒ１５ 轴承钢基体上经磁控溅射沉积约３００ｎｍ 纯Ｔｉ 层，再用脉冲偏压技术沉积ＤＬＣ膜的改性层，在ＤＬＣ膜与ＧＣｒ１５ 钢基体之间形成了ＣＴｉ 成分渐变的梯度层．
DLC (diamond-like carbon) films were prepared by plasma-based pulse bias technique. The hardness of DLC film was 30 GPa, and the resistance value was more than 100MΩ. Reducing the peak value of pulse negative bias and introducing hydrogen gas can promote the formation of SP3 structure. However, when the amount of hydrogen exceeds a certain threshold, the size of SP2 slice becomes thinner and the content of SP2 bond tends to increase. In the GCr15 bearing steel substrate by magnetron sputtering deposited about 300nm pure Ti layer, and then pulsed bias deposition of DLC film modified layer, formed in the DLC film and GCr15 steel substrate gradient C Ti composition gradient Floor.