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UMC采用其0.13μm RF CMOS工艺技术制造出一种压控振荡器 (VCO),其基本工作频率达到创记录的105 GHz。该芯片是由佛罗里达大学的电气与计算机工程学院的硅微波集成电路和系统研究组设计开发的。过去最高记录基本工作频率的CMOS电(?)是采用90 nm CMOS工艺制造的103 GHz振荡器,它消耗4倍的功率。而(?)大学的这项最新成果为105 GHz 的VCO和一个调频范围为2.4 GHz的99 GHz VCO,采用的是0.13 μm制程工艺。
UMC uses its 0.13μm RF CMOS process technology to create a voltage-controlled oscillator (VCO) that achieves a record operating frequency of 105 GHz. The chip was designed and developed by the Silicon Microwave Integrated Circuits and Systems Research Group at the University of Florida Electrical and Computer Engineering. The highest recorded basic operating frequency of CMOS electricity (?) Was the 103 GHz oscillator fabricated in a 90 nm CMOS process, which consumed 4 times the power. This (?) University’s newest achievement is the VCO at 105 GHz and a 99 GHz VCO at 2.4 GHz, using 0.13 μm process technology.