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Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD,and polycrystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400 ℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.
Amorphous silicon (a-Si) thin films were deposited on glass substrates by PECVD, and polycrystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has an amorphous structure after annealing at 400 ℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ° C for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.