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大型和微型计算机的存贮系统和外围设备的进展已经加速了用双层多晶硅NMOS工艺制造的16K静态RAM的发展。但是大容量静态RAM还存在一些困难的技术问题,例如动态功耗大,工艺相对来说比较复杂,以及2粒子引起的软差错等。 本文将发表用以前介绍过的HCMOS制造的16K静态RAM。单元的排列和截面如图1所示。为了保持数据而流向高(?)负载的电流是由通过掩埋结型场效应管提供的。结型场效应管电源单元省去了电源线,并为佈线设计提供了灵活性。它还允许采用单层多晶硅工艺,降低制造成本。单元面积是28×32微米。
Advances in storage systems and peripherals for large and micro-computers have accelerated the development of 16K static RAM made with a two-layer polysilicon NMOS process. However, there are still some difficult technical problems in high-capacity static RAM, such as large dynamic power consumption, relatively complex processes, and soft errors caused by 2 particles. This article will be released with HCMOS introduced previously introduced 16K static RAM. The arrangement and cross section of the unit are shown in Fig.1. The current that flows to the high (?) Load in order to hold the data is provided by the buried junction field effect transistor. Junction FET power supply unit eliminates the need for power cords and provides flexibility in wiring design. It also allows the use of single-layer polysilicon process, reducing manufacturing costs. The cell area is 28 × 32 μm.