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高长径比深孔阵列是微通道板、高分辨率X射线探测器、X射线二维光栅等器件的基本结构。基于制作大面积高长径比的深孔阵列目前仍是微纳制作技术面临的重大挑战。介绍了几种硅基微孔阵列的制作方法并分析了这几种方法的优劣。提出了用光助电化学刻蚀方法在硅基上制作大面积高长径比的深孔阵列,并从实验上研究了溶液浓度、温度、硅片掺杂浓度、光照条件、电流和电压等刻蚀过程参数对深孔微结构形貌的影响。最后给出了最佳刻蚀过程的实验参数,在整个5英寸(1英寸=2.54 cm)n型硅圆片上得到了长径比在40以上、有效圆面直径达110 mm的深孔阵列。
High aspect ratio deep hole array is the basic structure of microchannel plate, high-resolution X-ray detector, X-ray two-dimensional grating and other devices. Deep-hole arrays based on fabrication of large aspect ratios still present a significant challenge to micro / nano fabrication technology. Introduced several kinds of silicon microporous array production methods and analyzed the merits of these methods. A deep hole array with large area and high aspect ratio on Si substrate was proposed by photo-assisted electrochemical etching. The effects of solution concentration, temperature, doping concentration of silicon wafer, illumination conditions, current and voltage Effect of Etching Process Parameters on Morphology of Deep - hole Microstructures. Finally, the experimental parameters of the best etching process are given. A deep hole array with an aspect ratio above 40 and an effective round surface diameter of 110 mm is obtained on an entire 5-inch (1 inch = 2.54 cm) n-type silicon wafer.