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在ＳＭＦ－８００石墨第一壁化学腐蚀温度特性的实验研究基础上，进一步测试了Ｇ３石墨、ＳＭＦ－８００高纯石墨和硼化石墨，以及ＳｉＣ镀层等在１．３μＡ／３ｋｅＶ氘束轰击下化学腐蚀的温度特性。从中优选出Ｃ２Ｂ１０Ｈ１２氦辉光放电法制取的ＳＭＦ－８００石墨硼化层，它具有最佳的抗化学腐蚀性能。其ＣＤ４产额较ＳＭＦ－８００高纯石墨降低一个量级以上，ＣＤ４产额峰值温度下移至６５０Ｋ附近。用小角度转动样品法，初步地观察了氘束轰击下石墨释放ＣＤ４的角分布特性，为托卡马克偏滤器实验中建立ＣＤ４辐射区的定位及其控制等可行性进行了探索。
On the basis of the experimental study on the temperature dependence of chemical etching on the first wall of SMF-800 graphite, the chemical properties of G3 graphite, SMF-800 high purity graphite and graphite boride, and SiC coating were further tested under the deuterium beam bombardment of 1.3μA / 3keV Corrosion temperature characteristics. Preferred from the C2B10H12 helium glow discharge prepared SMF-800 graphite boronization layer, it has the best chemical corrosion resistance. Its CD4 production was down by more than one order of magnitude over that of SMF-800 high-purity graphite, and its CD4 yield peaked at around 650K. With the small-angle rotation sample method, the angular distribution of CD4 released by deuterium beam bombardment was initially observed, and the feasibility of establishing the CD4 radiation area in tokamak divertor experiment and its control were explored.