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一、前言三元化合物Hg_(1-x)CdxTe,实际上是一种(Cd Te) x与(Hg Te)_(1-x)的准二元系合金半导体。其禁带宽度Eg随合金中Cd Te的克分子数X几乎是线性的变化,并且和工作温度T有如下关系:
I. INTRODUCTION The ternary compound Hg_ (1-x) CdxTe is actually a semibinary alloy semiconductor of (Cd Te) x and (Hg Te) _ (1-x) The forbidden band width Eg changes almost linearly with the mole number X of CdTe in the alloy and has the following relationship with the operating temperature T: