,Backstepping-Based Synchronization Control of Cross-Strict Feedback Hyper-Chaotic Systems

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:sun593792820
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
A certain backstepping control is proposed for synchronization of a class of hyper-chaotic systems.Only two control inputs are used to realize synchronization between hyper-chaotic systems,and the control avoids the possible singularity in the virtual control design.In addition,the adaptive backstepping control is proposed for the synchronization when the system parameters are unknown.The proposed methods can be applied to a variety of chaos systems which can be described by the so-called cross-strict feedback form.Numerical simulations are given to demonstrate the effciency of the proposed control schemes.
其他文献
A combination of large mass,weak spring and nano-grating is the key for a nano-grating accelerometer to measure nano-G acceleration.A novel compact nano-grating
期刊
The electron spin dynamics is investigated by the time-resolved Kerr rotation technique in a pair of special GaAs/AlGaAs asymmetric quantum well samples grown o
期刊
We present an analytical investigation for a baseline-free imaging of a defect in plate-like structures using the time-reversal of Lamb waves.We first consider
期刊
Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method.A mid-infrared laser can
期刊
An improved analytical model of the drift field suppressed by the Dember field due to ambipolar diffusion in the p-type quasineutral region (p-QNR) of a forward
期刊
期刊
签于目前冷凉灌区春小麦播量大,密度高,倒伏严重的情况,是影响本区小麦高产的重要因素之一,为指导大面积生产提供小麦合理密植的依据,弄清苗密度对产最的影响和影响苗密度因
虹鳟(galm gairclneri irideus)原产美国,是世界性养殖的优质高产品种。它肉多刺少,肉质鲜嫩,美味可口,属上等佳肴珍品。国际市场列为高档商品鱼,经济价值高。虹鳟属冷水性
We propose a simplified human regular mobility model to simulate an individuals daily travel with three sequential activities:commuting to workplace,going to do
期刊
Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) i
期刊