据报道,美国加利福尼亚大学研制成新型异质结AlGaN/AIN/GaN HEMT。对于通常的HEMT在高的电荷密度下,插入极薄的AIN界面层(～1nm)保持高迁移率,提高有效AEc和降低合金散射。基于这种结构器件具有很好的DC和RF性能,在GaN HEMT中也插入AIN界面层。在V_GS在2V下,高的峰值电流为1A/mm,在8GHz下,功率效率为28%时的输出功率密度为8.4W/mm。 It is reported that the University of California developed a new type of heterojunction AlGaN / AIN / GaN HEMT. With the usual HEMTs at very high charge densities, insertion of a very thin AIN interfacial layer (~ 1 nm) maintains high mobility, increases effective AEc and reduces alloy scattering. Based on this structure of the device has good DC and RF performance, GaN HEMT also inserted in the AIN interface layer. At V_GS at 2V, the high peak current is 1A / mm, and at 8GHz, the output power density is 8.4W / mm at a power efficiency of 28%.