Silicon carbonitride (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere using magnetron-sputtering system. The effect of the N2 concentration, RF substrate bias voltage and target current on film deposition rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%. The effect of the N2 concentration, RF substrate bias voltage and target current on film deposition (SiCN) coatings were deposited on silicon and tungsten carbide substrates by co-sputtering silicon and carbon in argon and nitrogen mixture atmosphere rate, roughness, adhesion, mechanical and tribological properties of coatings were investigated. The deposition rate was found to increase with the increasing nitrogen concentration. X-ray photoelectron spectroscopy analysis showed that high nitrogen concentration in the nitrogen-argon gas mixture enhanced the incorporation of C and N but reduced the incorporation of Si. SiCN coatings have good tribological properties at a N2 concentration of approximately 60%.