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利用半导体材料波长易调节的特点,设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构,得到760、800、860、930和976nm 5个波长激射的半导体列阵激光器,同时设计了4个短波通滤波片参数,开展了半导体列阵激光器的多波长光束复合技术的实验研究,最终实现了5个波长的半导体列阵激光器的光束复合,得到112W的激光功率输出,总体效率为88.5%,其中波长复合效率达92.4%,输出聚焦光斑尺寸为136μm×1 330μm,聚焦光功率密度达6.43×104 W/cm2。
The AlGaInAs / GaAs / AlGaAs piezoresistive quantum well structure is designed by using the characteristics of easy wavelength adjustment of the semiconductor material, and five semiconductor lasers with a wavelength of 760, 800, 860, 930 and 976 nm are obtained. Four short wavelength pass Filter parameters to carry out the experimental study of the multi-wavelength beam compounding technology of the semiconductor laser array finally achieved the five-wavelength semiconductor laser array beam combiner obtained 112W laser power output, the overall efficiency of 88.5%, of which wavelength The composite efficiency was 92.4%. The output focused spot size was 136μm × 1 330μm, and the focused optical power density was 6.43 × 104 W / cm2.