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讨论了最差应力模式下 (Vg=Vd/ 2 )宽沟和窄沟器件的退化特性 .随着器件沟道宽度降低可以观察到宽度增强的器件退化 .不同沟道宽度 p MOSFETs的主要退化机制是界面态产生 .沟道增强的器件退化是由于沟道宽度增强的碰撞电离率 .通过分析电流拥挤效应 ,阈值电压随沟道宽度的变化 ,速度饱和区特征长度的变化和 HAL O结构串联阻抗这些可能原因 ,得出沟道宽度增强的热载流子退化是由宽度降低导致器件阈值电压和串联阻抗降低的共同作用引起的 .
Degradation characteristics of wide-channel and narrow-channel devices under the worst stress mode (Vg = Vd / 2) are discussed. The device with wide-range enhancement can be observed as the channel width of the device decreases. The main degradation mechanisms of different channel widths, p MOSFETs, Is the interface state.The channel degradation is due to the enhanced channel ionization rate.By analyzing the current crowding effect, the threshold voltage changes with the channel width, the characteristic length of the saturation region and the series impedance of the HAL O structure For these possible reasons, it is concluded that the degradation of hot carrier with enhanced channel width is caused by the combined effect of the reduced width of the device resulting in the threshold voltage of the device and the decrease of the series impedance.