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采用电子束蒸发的方法在抛光的２００℃ＡｌＮ陶瓷衬底上淀积厚度为２００ｎｍ的Ｔｉ膜，并在高真空中退火．利用二次离子质谱（ＳＩＭＳ）、卢瑟福背散射谱（ＲＢＳ）、俄歇电子能谱（ＡＥＳ）和Ｘ射线衍射分析（ＸＲＤ）技术，研究了从２００～８５０℃温区内Ｔｉ与ＡｌＮ的固相界面反应，给出了界面组分分布随退火温度和时间的变化关系．在界面区发现了三元铝化物并观测到铝化物产生与发展过程．指出铝化物由Ｔｉ－Ａｌ二元和Ｔｉ－Ａｌ－Ｎ三元化合物组成．最后利用热力学理论对实验结果进行了解释
A Ti film having a thickness of 200 nm was deposited on a polished 200 ° C AlN ceramic substrate by electron beam evaporation and annealed in a high vacuum. The effects of Ti and AlN in the temperature range of 200 ~ 850 ℃ were studied by using SIMS, RBS, AES and XRD. The relationship between the distribution of interface components and the annealing temperature and time is given. Ternary aluminides were found in the interface zone and the production and development of aluminides were observed. It is pointed out that the aluminides consist of Ti-Al binary and Ti-Al-N ternary compounds. Finally, the thermodynamic theory is used to explain the experimental results