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在InSb上已制成全单片红外CCD列阵,其探测和读出功能已得到证实。已报道的器件是兼有MOS探测器和四相交迭栅、表面沟道CCD的20元线列。CCD为P沟,并用离子注入的平面p—n结作为胖零输入和电荷输出。其电荷转移效率为0.995,是受侧面表面势变化而非表面态限制的。转移栅时钟既可以使20元探测器的信号分多路输出,也可以使信号叠加,实现时间延迟积分。工作温度为65K、背景通量为10~(12)光子·秒~(-1)·厘米~(-2)时测得:积分时间5ms、多路模式工作的列阵的单元峰值探测率D~*>8×10~(11)cm·Hz~(1/2)W~(-1)、列阵的D~*平均值为6.4×10~(11)cm·Hz~(1/2)·W~(-1)。
All-in-one infrared CCD arrays have been fabricated on InSb and their probing and readout capabilities have been demonstrated. The reported device is a 20-element line with both a MOS detector and a quad-intersection grid with a surface channel CCD. The CCD is a P-groove and uses a planar p-n junction that is ion implanted as a fat zero input and a charge output. The charge transfer efficiency of 0.995, is subject to surface potential changes rather than the surface state constraints. Transfer gate clock can make the 20 yuan detector signal multiple output, but also can signal superimposed to achieve time delay integration. Operating temperature is 65K, background flux is 10 ~ (12) photons · s ~ (-1) · cm ~ (-2) measured: integration time 5ms, multi-mode operation of the array element peak detection rate D ~ *> 8 × 10 ~ (11) cm · Hz ~ (1/2) W ~ (-1), the average value of D ~ * was 6.4 × 10 ~ (11) cm · Hz ~ (1/2 ) · W ~ (-1).