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器件单粒子闩锁效应(SEL)预估方法一般是建立在只有一个敏感体积单元的长方体(RPP)模型上,静态随机存储器(SRAM)单粒子闩锁敏感区的定位试验结果表明敏感体积单元不仅有一个.利用脉冲激光定位SRAM K6R4016V1D单粒子闩锁效应敏感区的试验结果对器件在轨SEL事件率进行了修正计算.首先利用脉冲激光定位SRAM SEL敏感区,获得敏感区的分布情况,并确定整个器件敏感体积单元的数量.然后针对不同的空间轨道、辐射粒子以及敏感体积厚度和敏感体积单元数进行了相应的器件SEL事件率计算,并对计算结果进行了分析讨论.结果表明,重离子引起的SEL事件率随敏感体积单元数量的增大而减小;修正敏感体积单元数量对预估质子引起的SEL事件率非常必要,否则将会过高评估质子直接电离作用对SEL事件率的贡献.
The device single-particle latch-up (SEL) prediction method is generally based on the RPP model with only one sensitive volume element. The static test results of single-cell latch-up in the sensitive area show that the sensitive volume element not only There is a pulsed laser positioning SRAM K6R4016V1D single-particle latch-effect sensitive area of the test results on-device SEL event rate correction in the rail. First of all, the use of pulsed laser positioning SRAM SEL sensitive area, access to the sensitive area of the distribution and to determine And the number of sensitive unit cells in the whole device.Secondly, according to different space orbitals, radiation particles and the number of sensitive volumetric thicknesses and the number of sensitive volume elements, a corresponding device SEL event rate calculation is carried out and the calculation results are analyzed and discussed.The results show that heavy ion The resulting SEL event rate decreases with increasing number of sensitive volume elements; correcting the number of sensitive volume elements is necessary to estimate the rate of SEL events caused by protons, which otherwise would overestimate the contribution of proton direct ionization to the rate of SEL events .