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本文利用潮湿浸渍法将碘化铯(CsI)掺杂至12CaO·7Al2O3(C12A7)型负离子存储发射材料的表面并对其的结构与存储特性进行了X射线衍射和电子顺磁共振的表征,与此同时还对该材料的发射特性、离子发射分支比以及温度对发射强度的影响等方面进行了研究和分析。将实验和表征结果与未掺杂的C12A7进行对比后发现,C12A7表面上CsI的掺入很大程度上改善了该材料的发射特性。掺杂CsI后,在800 V·cm-1的引出场下,发射温度由570℃降低至470℃,与此同时,在同样的发射条件下,其发射强度也明显增强。低温区(<500℃)氧负离子O-的发射纯度接近100%。以上结果表明掺杂CsI至C12A7表面是一种在低温下获得氧负离子O-源的有效途径。
In this paper, cesium iodide (CsI) was dipped into the surface of 12CaO · 7Al2O3 (C12A7) anion storage and storage device by wet impregnation method. The structure and storage characteristics of CsI were characterized by X-ray diffraction and electron paramagnetic resonance. At the same time, the emission characteristics of the material, ion-emitting branching ratio and temperature on the emission intensity and other aspects of the study and analysis. Comparing the experimental and characterization results with undoped C12A7, we found that the incorporation of CsI on the surface of C12A7 greatly improves the emission characteristics of the material. After doping with CsI, the emission temperature decreased from 570 ℃ to 470 ℃ at 800 V · cm-1. At the same time, the emission intensity of CsI was significantly enhanced under the same emission conditions. Oxygen negative ion O-emission at near-100% purity at low temperatures (<500 ° C). The above results show that doping CsI to C12A7 surface is an effective way to obtain oxygen anion O-source at low temperature.