论文部分内容阅读
针对铝栅化学机械抛光(CMP)后硅溶胶颗粒残留等问题,研制了新型FA/O碱性清洗液并进行CMP后清洗实验。清洗液主要成分是FA/OⅡ螯合剂和O-20非离子型活性剂,由金相显微镜和原子力显微镜检测结果得出:FA/OⅡ螯合剂可以有效去除硅溶胶颗粒,当不加入FA/OⅡ螯合剂时,残留颗粒较多;当螯合剂体积分数为0.05‰~0.2‰时,残留颗粒数量明显下降。通过电化学工作站可知:随着O-20非离子型活性剂体积分数的提升(0~2‰),铝栅自腐蚀电流逐渐降低,由5.195μA下降到1.024μA。通过改变清洗液中螯合剂和活性剂的体积配比做单因素实验,得到最佳清洗效果和最弱腐蚀。实验结果表明:当清洗液中FA/OⅡ体积分数为0.15‰,O-20活性剂体积分数为1.5‰时,pH>10,表面粗糙度为2.4 nm,硅溶胶颗粒去除效果比较好且非均匀腐蚀比较弱。
Aiming at the problems such as residue of silica sol particles after aluminum gate chemical mechanical polishing (CMP), a new type of FA / O alkaline cleaning solution was developed and cleaned after CMP. The main components of the cleaning solution were FA / OⅡ chelating agent and O-20 non-ionic active agent. The results of optical microscope and atomic force microscope showed that the FA / OⅡ chelating agent could effectively remove the silica sol particles. When FA / OⅡ Chelating agent, the residual particles more; when the chelating agent volume fraction of 0.05 ‰ ~ 0.2 ‰, the number of residual particles decreased significantly. The electrochemical workstation shows that the self-corrosion current of aluminum grid decreases gradually from 5.195μA to 1.024μA as the volume fraction of O-20 non-ionic active agent increases (0-2 ‰). By changing the volume ratio of the chelating agent and the active agent in the cleaning solution, a single factor experiment is performed to obtain the best cleaning effect and the weakest corrosion. The experimental results show that when the volume fraction of FA / OⅡ in the cleaning solution is 0.15 ‰ and the volume fraction of O-20 active agent is 1.5 ‰, the pH value is above 10 and the surface roughness is 2.4 nm. The removal efficiency of silica sol particles is better and non-uniform Corrosion is relatively weak.