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本文提出利用晶体管的散射参数进行低噪声宽带高频放大器的CAD设计方法,详细讨论了所设计的放大器的特性。此方法也适用于其它高频电路的设计。
In this paper, the CAD design method of low-noise wideband high-frequency amplifier using the scattering parameters of the transistor is proposed, and the characteristics of the designed amplifier are discussed in detail. This method is also suitable for other high-frequency circuit design.