单栅和双栅场效应晶体管倍频器通过分析和计算机模拟进行了研究,理论预测和试验结果充分吻合。研究表明双栅场效应晶体管倍频器所以有良好性能,主要是因为有源器件有较高的本征增益。 Single-gate and double-gate field effect transistor multipliers were studied by means of analysis and computer simulations, and the theoretical predictions and experimental results were fully consistent. Studies have shown that dual-gate FET multiplier has good performance, mainly because of active devices have a higher intrinsic gain.