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为了实现简易可控生长Cu掺杂TiO_2纳米管并有效拓展其吸收带边,通过电化学阳极氧化,在Cu质量百分含量为5%的Cu_5Ti_(95)合金基体上生长出高度有序Cu掺杂TiO_2纳米管前驱体,并在O_2气氛450℃退火晶化2h。并对纳米管的形貌、晶型结构和光谱吸收等性能进行表征。结果表明:Cu-Ti-O纳米管阵列的管长、管径和管壁厚度分别为5.8μm、150nm和10~15nm,经O_2气氛450℃退火晶化2h后,纳米管底部发生锐钛矿向金红石相转变,Cu-Ti-O纳米管阵列吸收带边红移至450nm,为后续光电化学性能测试提供了重要的实验依据。
In order to achieve simple and controlled growth of Cu-doped TiO 2 nanotubes and to effectively broaden their absorption band edges, Cu-5Ti 95 alloy with Cu content of 5% was grown by electrochemical anodic oxidation TiO 2 nanotubes precursors were synthesized and annealed at 450 ℃ for 2 h in O 2 atmosphere. The nanotube morphology, crystal structure and spectral absorption were characterized. The results show that the tube length, tube diameter and tube wall thickness of Cu-Ti-O nanotube arrays are 5.8μm, 150nm and 10-15nm respectively. After annealed at 450 ℃ for 2h, the anatase The transition from rutile to Cu-Ti-O nanotube arrays was red-shifted to 450 nm, which provided an important experimental basis for subsequent photoelectrochemical performance testing.