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对同质硅分子束外延层的界面缺陷进行了测试与分析．对存在高浓度施主型界面缺陷的Ｐ型材料，通过解泊松方程计算了该材料的肖特基势垒的能带图，得到了该缺陷能级上电子的填充与发射随外加反向偏压变化的情况．并分析了用深能级瞬态谱（ＤＬＴＳ）对其进行测试所需的条件，以及与常规的ＤＬＴＳ测试结果的不同之处．提出了可同时对该缺陷上电子的发射和俘获过程进行ＤＬＴＳ测量的方法．实验测量结果表明，该高密度的界面缺陷的能级位置位于Ｅ＿ｃ－０．３０ｅＶ．
The interface defect of homogeneous silicon molecular beam epitaxial layer was tested and analyzed. The energy band diagram of the Schottky barrier of this material is calculated by solving the Poisson’s equation for the P-type material with high concentration of donor-type interface defects. The electron filling and emission at the defect level are obtained with the addition of reverse bias Pressure changes. And analyzed the conditions required to test them with deep level transient spectroscopy (DLTS), as well as the differences from the conventional DLTS test results. A new method of DLTS measurement is proposed, which can simultaneously emit and capture the defects. Experimental results show that the energy level of this high-density interface defect is located at E_c-0.30eV.