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复杂半导体材料结构中的载流子分布特性对器件性能有重要影响.本文针对一种新型的波长上转换红外探测器,研究了载流子阻挡结构对载流子分布和器件特性的影响.论文通过自洽求解薛定谔方程、泊松方程、电流连续性方程和载流子速率方程分析了不同器件结构中的空穴分布.同时,生长了相应结构的外延材料,并通过电致荧光谱分析了载流子阻挡结构对器件特性的影响.结果表明,2 nm厚的AlAs势垒层既能有效阻挡空穴又不影响电子输运,有利于制作波长上转换红外探测器.此外,论文分析了阻挡势垒层的厚度和高度以及工作温度对载流子分布的影响.本文研究结果亦可应用于其他载流子非均匀分布的半导体器件.
The carrier distribution in complex semiconductor material structures has an important influence on the performance of the device.In this paper, a new type of wavelength-converted infrared detector is used to study the effect of carrier blocking structure on carrier distribution and device characteristics. The self-consistent solutions of Schrödinger equation, Poisson equation, current continuity equation and carrier rate equation were used to analyze the distribution of holes in different device structures. At the same time, the epitaxial materials with corresponding structures were grown and analyzed by electrofluorescence spectroscopy Carrier barrier structure on the device characteristics.The results show that the 2 nm thick AlAs barrier layer can effectively block holes and does not affect the electron transport, is conducive to the production of wavelength up-conversion infrared detector.In addition, the paper analyzed Blocking the thickness and height of the barrier layer and the influence of operating temperature on the carrier distribution.The results of this paper can also be applied to other semiconductor devices with non-uniform carrier distribution.