本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形. In this paper, we study the total dose effect of 0.8μm SOI NMOS transistor irradiated by 60Coγ radiation with a dose rate of 50rad (Si) / s, and analyze the radiation response of the device under different irradiation conditions and measurement bias. The results show that the higher the gate bias voltage during irradiation is, the more the hole trap charge accumulates in the gate oxide layer after irradiation, the larger the drain leakage current will be.For a device with 5V bias drain, When the gate voltage is greater than the threshold voltage, the drain current in the front gate ID-VG characteristic curve suddenly increases due to impact ionization, and the current curve of the body electrode presents an inverted bell.