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本文研究了用常压GVD法和GD(辉光放电)法生长的非晶与多晶硅薄膜电导特性随膜中晶粒大小的变化规律。在临近晶化温度上下范围生长的样品,带尾宽度随膜中晶粒增大而显著地减小;当晶粒增大到约为700～800 (?)范围时,带尾趋于消失。在临近晶化温度以下范围生长的样品,低温下呈现出能隙中局域态传导特征,在临近晶化温度以上生长的样品,在低温下的传导是由多晶晶粒间界区域深缺陷能级引起的。在这两种非晶硅薄膜中含有小于200 (?)的微晶结构时,仍以非晶传导为主要特征,Mott-Davis局域态导电模型仍然适用。
In this paper, the conductance of amorphous and polycrystalline silicon films grown by atmospheric pressure GVD and GD (glow discharge) method was investigated. In the samples growing up and down near the crystallization temperature, the width of the tape tail decreases with the increase of the grain size in the film. When the grain size increases to about 700 ~ 800 (?), The tape tail tends to disappear. Samples grown near the crystallization temperature showed localized conduction characteristics in the energy gap at low temperatures. Samples grown above the crystallization temperature were transported at low temperatures by deep defects in the intergranular region of the polycrystalline grain Caused by energy level In these two amorphous silicon thin films containing less than 200 (?) Of the microcrystalline structure, the main feature of amorphous conduction, Mott-Davis local state conductivity model is still applicable.